390V, 9A HGT1H12N60A4DS are MOS gated higher voltage switching 600V Swit 1.5. Dimension:173K fairchildsemi HGTG12N60A4D, HGTP12N60A4D, HGT1H12N60A4DS Data Sheet December 2001 600V, SMPS Collection N-Channel IGBT with Functions Anti-Parallel Hypérfast Diode >100kHz Operation.ģ90V, 12A The HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation. 48 nC) ended up especially tailored to 1.4.
12 A, 600 V, RDS(on) = 650 mΩ (Utmost.) VGS = 10 Sixth is v, transistors are produced using Fairchild's i9000 proprietary, planar Identification = 6 A stripe, DMOS technologies. Size:1701K fairchildsemi Drive 2014 FQP12N60C N-Channel QFET® MOSFET 600 Sixth is v, 12 A new, 650 mΩ Description Functions These N-Channel enhancement mode power field impact. Low Crss ( standard 21pF) This superior technology provides been specifically customized to 1.3. Size:1170K fairchildsemi Sept 2007 ® QFET FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Features Explanation 12A, 600V, RDS(on) = 0.65? = 10 Sixth is v These N-Channel enhancement mode strength field impact Lower gate charge ( standard 48 nC) transistors are produced making use of Fairchilds proprietary, planar stripe, DMOS technologies.
12pF) This progress technology offers happen to be esp 1.2. FDPF12N60NZ N-Channel MOSFET? 600V, 12A, 0.65? Features Description RDS(ón) = 0.53? ( VGS = 10V, Identity = 6A These N-Channel improvement mode power field impact transis- tors are usually produced making use of Fairchildh proprietary, planar stripe, Lower gate cost ( Typ.Ģ6nG) DOMS technologies. Size:284K fairchildsemi Sept 2010 UniFET-II TM FDP12N60NZ. MOSFET Cross-Reference Search 12N60 Datasheet (PDF) 1.1.
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